объем памяти

IC DRAM 4G PARALLEL 96TWBGA. DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM

IC DRAM 512M PARALLEL 54TSOP. DRAM 512M, 3.3V, SDRAM, 64Mx8, 166Mhz, 54 pin TSOP II RoHS, T&R

IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M 16Mx32 166Mhz SDRAM, 3.3v

IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G, 1.5V, 1600MT/s 128Mx16 DDR3

IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G, 1.35V, 1333Mhz DDR3

IC SRAM 4.5M PARALLEL 165TFBGA. SRAM 4Mb 3.3V 7.5ns 128K x 36 Sync SRAM

IC SRAM 8M PARALLEL 90TFBGA. SRAM 8Mb 256Kx32 10ns Async SRAM

IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM

IC SRAM 8M PARALLEL 48TSOP I. SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS

IC DRAM 512M PARALLEL 54TSOP.

IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive (Tc: -40 to +105C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS

IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R

IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M (16Mx32) Mobile DDR 1.8v

IC SRAM 16M PARALLEL 48TSOP I. SRAM 16Mb, Low Power/Power Saver,Async, 1Mb x 16/2Mb x 8, 45ns, 2.2v~3.6v,48 Pin TSOP I, RoHS

IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive (Tc: -40 to +105C), 2G, 1.35V, DDR3, 128Mx16, 1333MT/s @ 9-9-9, 96 ball BGA (9mm x13mm) RoHS

IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M, 2.5V, 133Mhz 16Mx32 Mobile SDR

IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M (16Mx32) 166MHz 1.8V Mobile SDR

IC SRAM 16M PARALLEL 48TSOP I. SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Pin TSOP I, RoHS

IC SRAM 16M PARALLEL 54TSOP. SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS

IC DRAM 2G PARALLEL 84TWBGA. DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16, IT