Toshiba CUHS10F60 Schottky Barrier Diode
Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to 150°C and a maximum junction temperature of 150°C. This Schottky diode also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.
Specifications
Absolute maximum ratings:60V reverse voltage (VR)1A average rectified current10A peak forward surge current150°C junction temperature-55°C to 150°C storage temperature
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